A step of forming the first substrate which has a separation layer and a Ge layer on the separation layer, and a step of forming a bonded substrate stack by bonding the first substrate to the second substrate through an insulating layer, and a step of dividing the bonded substrate stack at the separation...http://www.google.com/patents/US20050148122?utm_source=gb-gplus-sharePatent US20050148122 - Substrate, manufacturing method therefor, and semiconductor device
