A WN film serving as an adhesive layer is deposited over the sidewalls and bottom surface of a hole in a silicon oxide film where an information storage capacitor is to be formed. A Ru film to serve as a lower electrode for the information storage capacitor is formed above the WN film by CVD using Ru(HFAC)3,...http://www.google.com/patents/US6734086?utm_source=gb-gplus-sharePatent US6734086 - Semiconductor integrated circuit device and method of manufacturing the same
