A program verification method for a memory device having a virtual array including a plurality of memory cells determines if leakage current passes through one or more neighboring memory cells to the programmed memory cell. The programmed memory cell is verified based on a first threshold state if leakage...http://www.google.com/patents/US7295471?utm_source=gb-gplus-sharePatent US7295471 - Memory device having a virtual ground array and methods using program algorithm to improve read margin loss
