The present invention relates to a semiconductor device which is fabricated in simple process steps and which prevents deterioration in a breakdown voltage. Two diffusion regions are formed in space in a surface of an n.sup.- type layer. The diffusion regions are separated from each other by an insulation...http://www.google.com/patents/US5455439?utm_source=gb-gplus-sharePatent US5455439 - Semiconductor device which moderates electric field concentration caused by a conductive film formed on a surface thereof
