There is provided an improved method for eliminating of cycling-induced electron trapping in the tunneling oxide of flash EEPROM devices. A relatively low positive pulse voltage is applied to a source region of the EEPROM devices during an entire erase cycle. Simultaneously, a negative ramp voltage is...http://www.google.com/patents/US5485423?utm_source=gb-gplus-sharePatent US5485423 - Method for eliminating of cycling-induced electron trapping in the tunneling oxide of 5 volt only flash EEPROMS
