A high frequency power field effect transistor has a self-aligned gate-drain shield adjacent to the gate and overlying the drain. Fabrication of the structure does not require complex or costly processing and the resulting self-aligned shield structure minimizes increase to input and output capacitances....http://www.google.com/patents/US6222229?utm_source=gb-gplus-sharePatent US6222229 - Self-aligned shield structure for realizing high frequency power MOSFET devices with improved reliability
