A method (and resultant structure) of forming a semiconductor device, includes forming a metal-back-gate over a substrate and a metal back-gate, forming a passivation layer on the metal back-gate to prevent the metal back-gate from reacting with radical species, and providing an intermediate gluing layer...http://www.google.com/patents/US7145212?utm_source=gb-gplus-sharePatent US7145212 - Method for manufacturing device substrate with metal back-gate and structure formed thereby
