A dielectric film containing lanthamide doped TiOx and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO2. A dielectric film is formed by ion assisted electron beam evaporation of TiO2 and electron...http://www.google.com/patents/US20040164365?utm_source=gb-gplus-sharePatent US20040164365 - Lanthanide doped TiOx dielectric films
