A method for forming a metal/metal oxide structure that includes forming metal oxide regions, e.g.. ruthenium oxide regions, at grain boundaries of a metal layer, e.g., platinum. Preferably, the metal oxide regions are formed by diffusion of oxygen through grain boundaries of the metal layer, e.g., platinum,...http://www.google.com/patents/US6917112?utm_source=gb-gplus-sharePatent US6917112 - Conductive semiconductor structures containing metal oxide regions
