A method is provided for blocking implants from the gate electrode of an FET device. Form a first planarizing film covering the substrate and the gate electrode stack. The first planarizing film is planarized by either polishing or self-planarizing. For deposition by HDP or use of spin on materials,...http://www.google.com/patents/US6803315?utm_source=gb-gplus-sharePatent US6803315 - Method for blocking implants from the gate of an electronic device via planarizing films
