A method is provided for fabrication of a semiconductor substrate having regions isolated from each other by shallow trench isolation (STI) structures protruding above a surface of the substrate by a step height. The method includes the steps of forming a bottom antireflective coating (BARC) layer overlying...http://www.google.com/patents/US7153755?utm_source=gb-gplus-sharePatent US7153755 - Process to improve programming of memory cells
