An improved EEPROM structure is provided which has a longer data retention period. This is achieved by utilizing only positive charges to store data on the floating gate. The EEPROM structure includes a write select transistor (112), a read select transistor (120), and a floating gate sense...http://www.google.com/patents/US5742542?utm_source=gb-gplus-sharePatent US5742542 - Non-volatile memory cells using only positive charge to store data
