Gallium nitride material-based semiconductor structures are provided. In some embodiments, the structures include a composite substrate over which a gallium nitride material region is formed. The gallium nitride material structures may include additional features, such as strain-absorbing layers and/or...http://www.google.com/patents/US7791106?utm_source=gb-gplus-sharePatent US7791106 - Gallium nitride material structures including substrates and methods associated with the same
