A method for forming a PN junction is described. A stacked structure consisting of an N-doped (or P-doped) layer, a dielectric layer and a nucleation layer is formed, and then an insulating layer is formed having an opening therein. A P-doped (or N-doped) polysilicon or amorphous silicon layer is filled...http://www.google.com/patents/US6890819?utm_source=gb-gplus-sharePatent US6890819 - Methods for forming PN junction, one-time programmable read-only memory and fabricating processes thereof
