The invention is a method, and associated apparatus and product, of forming extremely pure epitaxial layers of silicon carbide by reducing the carrier concentration of residual nitrogen in silicon carbide formed by chemical vapor deposition processes. The method comprises placing a substrate upon which...http://www.google.com/patents/US5119540?utm_source=gb-gplus-sharePatent US5119540 - Apparatus for eliminating residual nitrogen contamination in epitaxial layers of silicon carbide and resulting product
