A dielectric film containing atomic layer deposited HfSiON and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. The HfSiON layer thickness is controlled by repeating for a number of cycles a sequence...http://www.google.com/patents/US7326980?utm_source=gb-gplus-sharePatent US7326980 - Devices with HfSiON dielectric films which are Hf-O rich
