Methods of forming integrated circuit capacitors include the steps of forming a trench in a first electrically insulating layer and then forming a first electrically conductive layer on a sidewall and bottom of the trench. A dielectric layer is then formed on the first electrically conductive layer....http://www.google.com/patents/US6150206?utm_source=gb-gplus-sharePatent US6150206 - Methods of forming integrated circuit capacitors using trench isolation and planarization techniques
