A semiconductor device, e.g., a DRAM, having vertical conduction transistors and cylindrical cell gates, which includes a plurality of spaced-apart trench isolation regions formed in a semiconductor substrate, a plurality of bit lines formed on the semiconductor substrate, a silicon pillar formed on...http://www.google.com/patents/US5460994?utm_source=gb-gplus-sharePatent US5460994 - Semiconductor device having vertical conduction transistors and cylindrical cell gates
