A silicon wafer for epitaxial growth consisting of a highly boron-doped silicon single crystal wafer, an antimony-doped silicon single crystal wafer or a phosphorus-doped silicon single crystal wafer, which allows easy oxygen precipitation and exhibits high gettering ability in spite of its suppressed...http://www.google.com/patents/US6478883?utm_source=gb-gplus-sharePatent US6478883 - Silicon single crystal wafer, epitaxial silicon wafer, and methods for producing them
