A wafer W is placed on a lower electrode 106 provided inside a processing chamber 102 of a plasma processing apparatus 100. A film constituted an organic polysiloxane, which is a Low-K material is formed at the wafer W. Plasma is generated inside the processing chamber 102 to implement an etching process...http://www.google.com/patents/US6670276?utm_source=gb-gplus-sharePatent US6670276 - Plasma processing method
