The semiconductor device of the invention includes a transistor, an insulating layer provided over the transistor, a first conductive layer (corresponding to a source wire or a drain wire) electrically connected to a source region or a drain region of the transistor through an opening portion provided...http://www.google.com/patents/US7605056?utm_source=gb-gplus-sharePatent US7605056 - Method of manufacturing a semiconductor device including separation by physical force
