A method for producing a stress-engineered substrate includes selecting first and second materials for forming the substrate. An epitaxial material for forming a heteroepitaxial layer is then selected. If the lattice constant of the heteroepitaxial layer (a.sub.epi) is greater than that (a.sub.sub) of...http://www.google.com/patents/US6329063?utm_source=gb-gplus-sharePatent US6329063 - Method for producing high quality heteroepitaxial growth using stress engineering and innovative substrates
