Disclosed is a method of manufacturing an MIS-type semiconductor device having a greatly reduced interface state density. In this method, before the formation of a gate insulating film, the surface of a GaAs substrate is treated with a plasma generated from a gas containing hydrogen and nitrogen or from...http://www.google.com/patents/US5336361?utm_source=gb-gplus-sharePatent US5336361 - Method of manufacturing an MIS-type semiconductor device
