A semiconductor device 100 includes a low-k dielectric insulator 104. In the preferred embodiment, a low-k dielectric material 104 is deposited. This material 104 is then cured using a plasma cure step. The cure process causes the density of the top portion 106 of layer 104 to be increased. The higher...http://www.google.com/patents/US20040097099?utm_source=gb-gplus-sharePatent US20040097099 - Method of forming a semiconductor device with a substantially uniform density low-k dielectric layer
