A memory cell of the EEPROM type formed on a semiconductor material substrate having a first conductivity type includes a drain region having a second conductivity type and extending at one side of a gate oxide region which includes a thin tunnel oxide region. The memory cell also includes a region of...http://www.google.com/patents/US6320219?utm_source=gb-gplus-sharePatent US6320219 - Memory cell for EEPROM devices and corresponding fabricating process
