A low voltage P-channel power MOSFET using trench technology has an epitaxially deposited constant concentration N channel region adjacent the side walls of a plurality of trenches. The constant concentration channel region is deposited atop a P+ substrate and receives P+ source regions at the tops of...http://www.google.com/patents/US7462910?utm_source=gb-gplus-sharePatent US7462910 - P-channel trench MOSFET structure
