The invention provides a technique to fabricate a dielectric plug in a MOSFET. The dielectric plug is fabricated by forming an oxide layer over exposed source and drain regions in the substrate including a gate electrode stack. The formed oxide layer in the source and drain regions are then substantially...http://www.google.com/patents/US20030234422?utm_source=gb-gplus-sharePatent US20030234422 - Methods of fabricating a dielectric plug in mosfets to suppress short-channel effects
