Disclosed is a method for manufacturing a semiconductor device using a polycrystalline silicon layer as an electrode and/or wire which includes a process for applying a laser light or electron beam to the polycrystalline silicon layer prior to a patterning process, thereby preventing over-etching and...http://www.google.com/patents/US4267011?utm_source=gb-gplus-sharePatent US4267011 - Method for manufacturing a semiconductor device
