A non-volatile memory is disclosed. A contiguous layer of phase change material (21; 31; 61; 71; 81) is provided. Proximate the contiguous layer of phase change material (21; 31; 61; 71; 81) is provided a first pair of contacts (22; 32; 62; 72; 82) for providing an electrical current therebetween, the...http://www.google.com/patents/US8208293?utm_source=gb-gplus-sharePatent US8208293 - Programmable phase-change memory and method therefor
