A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN superlattice mitigates the strain between a GaN/sapphire template and a multiple quantum well heterostructure...http://www.google.com/patents/US8154009?utm_source=gb-gplus-sharePatent US8154009 - Light emitting structure including high-al content MQWH
