A semiconductor substrate having a surface, a field oxide region at the surface and a gate structure above the surface are provided. A sidewall spacer is formed adjacent to the gate structure and a polysilicon layer is formed above the substrate, the polysilicon layer having raised first and second portions...http://www.google.com/patents/US6063676?utm_source=gb-gplus-sharePatent US6063676 - Mosfet with raised source and drain regions
