A method of forming a fully depleted semiconductor-on-insulator (SOI) field effect transistor (FET). The method includes forming a T-shaped gate electrode formed at least in part in a recess formed in a layer of semiconductor material and over a body region that is disposed between a source and a drain....http://www.google.com/patents/US6509234?utm_source=gb-gplus-sharePatent US6509234 - Method of fabricating an ultra-thin fully depleted SOI device with T-shaped gate
