A transistor includes a gate dielectric overlying a channel region. A source region and a drain region are located on opposing sides of the channel region. The channel region is formed from a first semiconductor material and the source and drain regions are formed from a second semiconductor material....http://www.google.com/patents/US20060189056?utm_source=gb-gplus-sharePatent US20060189056 - Strained channel complementary field-effect transistors and methods of manufacture
