A method for forming an electrode structure includes the steps of forming a conductive electrode on the microelectronic substrate, forming HSG-silicon seeds on the surface of the conductive electrode, and etching the conductive electrode using the HSG-silicon seeds as a mask so that pits are formed between...http://www.google.com/patents/US6194263?utm_source=gb-gplus-sharePatent US6194263 - Methods for forming capacitor structures including etching pits
