The present invention is directed to a production method for a nitride compound semiconductor element including a substrate and a multilayer structure 40 supported by an upper face of the substrate. First, a wafer 1 to be split into individual substrates is provided. A plurality of semiconductor layers...http://www.google.com/patents/US8039283?utm_source=gb-gplus-sharePatent US8039283 - Nitride compound semiconductor element and method for manufacturing same
