A method for fabricating a LOCOS isolation in accordance with the present invention, involves first forming a masking layer on the active region of a silicon substrate. Next, the masking layer is used as the etching mask and the silicon substrate is etched to form a recess. Then, a thin nitride layer...http://www.google.com/patents/US6225186?utm_source=gb-gplus-sharePatent US6225186 - Method for fabricating LOCOS isolation
