A method to define and tailor process limited lithographic features is provided. The method may be used to form sub lithographic spaces between features on a semiconductor wafer. A mask is formed and patterned on the wafer. Spacers are formed on sidewalls of the mask. The pattern of the mask and spacers...http://www.google.com/patents/US6610607?utm_source=gb-gplus-sharePatent US6610607 - Method to define and tailor process limited lithographic features using a modified hard mask process
