In a semiconductor device, an n.sup.+ polysilicon layer is formed on a substrate through a gateoxide layer. A p.sup.+ source or drain diffusion layer is formed on both sides of an impurity layer in the substrate. The silicon layer positions over an intermediate portion of a channel formation layer, and...http://www.google.com/patents/US5466958?utm_source=gb-gplus-sharePatent US5466958 - MOS-type semiconductor device having electrode structure capable of coping with short-channel effect and manufacturing method thereof
