An insulation film is formed on a semiconductor substrate by a method including the steps of: (i) introducing a source gas comprising a compound composed of at least Si, C, and H into a chamber; (ii) introducing in pulses an oxidizing gas into the chamber, wherein the source gas and the oxidizing gas...http://www.google.com/patents/US20030143867?utm_source=gb-gplus-sharePatent US20030143867 - Method for forming low dielectric constant interlayer insulation film
