A new nonvolatile hybrid memory cell is provided. The cell is comprised of a magnetic spin storage element and one or two semiconductor FET isolation elements. The magnetic spin storage element is an electron spin-based memory element situated on a silicon based substrate and includes a first ferromagnetic...http://www.google.com/patents/US7068535?utm_source=gb-gplus-sharePatent US7068535 - Magnetic spin based memory with semiconductor selector
