A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure is disclosed. The double-heterostructure includes a light-emitting layer formed of a low-resistivity In.sub.x Ga.sub.1-x N (0<x<1) compound semiconductor doped with p-type and/or n-type impurity....http://www.google.com/patents/US5734182?utm_source=gb-gplus-sharePatent US5734182 - Light-emitting gallium nitride-based compound semiconducor device
