A method of forming a contact in an integrated circuit between a first metalization layer and a silicon substrate. In one embodiment the method comprises forming a premetal dielectric layer over the silicon substrate, etching a contact hole through the premetal dielectric layer and then forming a thin...http://www.google.com/patents/US20030127427?utm_source=gb-gplus-sharePatent US20030127427 - Method of increasing the etch selectivity of a contact sidewall to a preclean etchant
