A method for sensing the content of a FLASH memory cell, and a new FLASH memory cell structure that is suitable for use with this new sensing scheme. In a first aspect, a semiconductor memory cell comprises a lightly doped n-region including a channel region; a first insulating layer overlying...http://www.google.com/patents/US5751631?utm_source=gb-gplus-sharePatent US5751631 - Flash memory cell and a new method for sensing the content of the new memory cell 
