A folded bitline type sense amplifier circuit is disposed at an outer side of an end memory cell array in which 2Tr1C type cells each composed of a data storage capacitor, an A port access transistor and a B port access transistor are arranged in the form of a matrix, and two word lines used for cell...http://www.google.com/patents/US6711050?utm_source=gb-gplus-sharePatent US6711050 - Semiconductor memory
