After formation of the storage poly in a stacked capacitor DRAM, the oxide 1 layer is partially etched to leave a thick oxide deposition in the area of the future bit line contact, upon which the cell poly is deposited, followed by oxide 2 and then a poly or nitride layer. A mask and etch process forms...http://www.google.com/patents/US5362666?utm_source=gb-gplus-sharePatent US5362666 - Method of producing a self-aligned contact penetrating cell plate
