This invention is intended to improve reliability of a nonvolatile semiconductor memory device and reduces a memory cell size of the nonvolatile semiconductor memory device. A memory cell which includes source/drain diffusion layers in a p-type well formed in a silicon substrate, silicon nitride dots...http://www.google.com/patents/US7442989?utm_source=gb-gplus-sharePatent US7442989 - Nonvolatile semiconductor memory device and method of manufacturing thereof
