A magnetic memory cell (10) has a semiconductor layer (12) positioned between first (11) and second (13) ferromagnetic layers forming either a p-n or Schottky junction. A magnetic layer (34) is positioned between the first ferromagnetic layer and a digit line (first) for pinning a magnetic vector within...http://www.google.com/patents/US6285581?utm_source=gb-gplus-sharePatent US6285581 - MRAM having semiconductor device integrated therein
