A method of manufacturing a semiconductor device, such as a double-diffused metal oxide semiconductor (DMOS) transistor, where a first layer may be formed on a semiconductor substrate, with isolation trenches formed in the first layer and semiconductor substrate, and with the trenches being filled with...http://www.google.com/patents/US6773995?utm_source=gb-gplus-sharePatent US6773995 - Double diffused MOS transistor and method for manufacturing same
