Memory devices are disclosed for storage and retrieval of information, wherein resistive plugs are provided above and below a phase change material to form a memory cell. The plugs may be formed by implanting regions in high resistivity material above and below a phase change material layer to lower...http://www.google.com/patents/US6545903?utm_source=gb-gplus-sharePatent US6545903 - Self-aligned resistive plugs for forming memory cell with phase change material
