Methods are provided for depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A process gas having a silicon-containing gas, an oxygen-containing gas, and a fluent gas is flowed into the substrate processing...http://www.google.com/patents/US20050282398?utm_source=gb-gplus-sharePatent US20050282398 - Oxygen plasma treatment for enhanced HDP-CVD gapfill
